
Material | Contains silicon | |
Content | 10.0 |
PA 700/10g

Material | Contains silicon | |
Content | 20.0 |
PA 700/20g

Material | Silicon free | |
Content | 10.0 |
PA 701/10g

Material | Silicon free | |
Content | 20.0 |
PA 701/20g

Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Dielectric coefficient | 2.0 |
SI 4018

Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Dielectric coefficient | 2.0 |
SI 4023

Semiconductor casing: | TO-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 480

Semiconductor casing: | TO-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 2.0 |
SI 481

Semiconductor casing: | SOT-32 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 3.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 485

Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 487-S