Semiconductor casing:
TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 2.0
SI 481
Semiconductor casing:
TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 480
Semiconductor mounted by:
Clip Mounting
;
Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
SI 4023-S
Material
Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
Thickness / mm: 0.23
Dielectric coefficient 2.0
SI 4023
Semiconductor mounted by:
Clip Mounting
;
Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Dielectric coefficient 2.0
SI 4018-S
Material
Silicon w. Glasfibre
Thickness / mm: 0.18
Dielectric coefficient 2.0
Thickness / mm: 0.18
Dielectric coefficient 2.0
SI 4018
Material
Silicon free
Content 50.0
Content 50.0
PA 701/50g
Material
Silicon free
Content 500.0
Content 500.0
PA 701/500g
Material
Silicon free
Content 250.0
Content 250.0
PA 701/250g
Material
Silicon free
Content 20.0
Content 20.0
PA 701/20g
