5839_1_Titel
Material Contains silicon
Content 10.0
PA 700/10g
5841_1_Titel
Material Contains silicon
Content 20.0
PA 700/20g
5843_1_Titel
Material Silicon free
Content 10.0
PA 701/10g
5844_1_Titel
Material Silicon free
Content 20.0
PA 701/20g
5850_1_Titel
Material Silicon w. Glasfibre
Thickness [mm]: 0.18
Dielectric coefficient 2.0
SI 4018
5851_1_Titel
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Dielectric coefficient 2.0
SI 4023
5856_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 480
5857_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Insulation capacity: 2.0
SI 481
5860_1_Titel
Semiconductor casing: SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 3.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 485
5862_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 487-S