12800_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width [mm]: 19.0
Length [mm]: 24.0
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
1663_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 479
5626_1_Titel
Semiconductor casing: Dioden
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 478
10474_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 475
5625_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 474
12457_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 472
5621_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 471
29388_1_Titel
Material Contains silicon
Content 50.0
PA 700/50g
6622_1_Titel
Material Contains silicon
Content 500.0
PA 700/500g
5829_1_Titel
Material Contains silicon
Content 250.0
PA 700/250g