General parameters

Thickness [mm]
-
Semiconductor Casing
Device mounted by


892_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 3.0
Insulation capacity: 30.0
Dielectric coefficient 9.0
AO 480
1663_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 479
5626_1_Titel
Semiconductor casing: Dioden
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 478
10474_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 475
5625_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 474
12457_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 472
5621_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 471