12800_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width [mm]: 19.0
Length [mm]: 24.0
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
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1663_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 479
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2419_1_Titel
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Dielectric coefficient 2.0
SI 4023-S
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2962_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 6018-S
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5452_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 6023-S
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5621_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 10.0
Dielectric coefficient 9.0
AO 471
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5625_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.5
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 474
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5626_1_Titel
Semiconductor casing: Dioden
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness [mm]: 1.6
Insulation capacity: 15.0
Dielectric coefficient 9.0
AO 478
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5794_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material MICA
Insulation capacity: 2.0
Temperature resistance 550.0
GL 510
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5799_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.05
Insulation capacity: 2.0
Temperature resistance 550.0
GL 530
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