Semiconductor casing:
TO-218
;
TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width / mm: 19.0
Länge / mm: 24.0
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width / mm: 19.0
Länge / mm: 24.0
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
Semiconductor mounted by:
Clip Mounting
;
Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7008-S
Semiconductor mounted by:
Clip Mounting
;
Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7007-S
Semiconductor mounted by:
Clip Mounting
;
Bonding
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7006-S
Semiconductor mounted by:
Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7005
Semiconductor casing:
TO-247
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7004
Semiconductor casing:
TO-247
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7003
Semiconductor casing:
TO-126
;
SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7002
Semiconductor casing:
TO-126
;
SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7001
Semiconductor casing:
TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 6023-S
