General parameters

Thickness [mm]
-
Semiconductor Casing
Device mounted by
Insulation and Heat Conduction

12800_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width [mm]: 19.0
Length [mm]: 24.0
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
31071_1_Titel
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7009-S
31032_1_Titel
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7008-S
31031_1_Titel
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7007-S
31029_1_Titel
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7005
31028_1_Titel
Semiconductor casing: TO-247
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7004
31027_1_Titel
Semiconductor casing: TO-247
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7003
31026_1_Titel
Semiconductor casing: TO-126 ; SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7002
31025_1_Titel
Semiconductor casing: TO-126 ; SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI7001
5452_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 6023-S