Calculate thermal parameters
Heat sink temperature::
Thermal resistance:
Allowed junction temperature of the semiconductor
Heat resistance between heat sink and electrical package
Thermal dissipation loss
Heat resistance between heat sink and electrical package
Ambient temperature

Semiconductor casing: | TO-218 ; TOP-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Width [mm]: | 19.0 | |
Length [mm]: | 24.0 | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
SI 491/N

Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 6018-S

Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
SI 6023-S

Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Dielectric coefficient | 2.0 |
SI 4018

Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Dielectric coefficient | 2.0 |
SI 4023

Semiconductor casing: | TO-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 480

Semiconductor casing: | TO-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 2.0 |
SI 481

Semiconductor casing: | SOT-32 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 3.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 485

Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 487-S

Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
SI 488