Semiconductor casing:
TO-218
;
TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width / mm: 19.0
Länge / mm: 24.0
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width / mm: 19.0
Länge / mm: 24.0
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
Semiconductor mounted by:
Clip Mounting
;
Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Dielectric coefficient 2.0
SI 4018-S
Material
Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
Thickness / mm: 0.23
Dielectric coefficient 2.0
SI 4023
Semiconductor mounted by:
Clip Mounting
;
Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
SI 4023-S
Semiconductor casing:
TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 480
Semiconductor casing:
TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 2.0
SI 481
Semiconductor casing:
SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 3.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 3.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 485
Semiconductor casing:
TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 487-S
Semiconductor casing:
TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 488
Semiconductor casing:
TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 489
