General parameters

Thickness [mm]
-
Semiconductor Casing
Device mounted by


12800_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width [mm]: 19.0
Length [mm]: 24.0
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
2962_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 6018-S
5452_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 6023-S
5850_1_Titel
Material Silicon w. Glasfibre
Thickness [mm]: 0.18
Dielectric coefficient 2.0
SI 4018
5851_1_Titel
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Dielectric coefficient 2.0
SI 4023
5856_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 480
5857_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness [mm]: 0.23
Insulation capacity: 2.0
SI 481
5860_1_Titel
Semiconductor casing: SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 3.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 485
5862_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 487-S
5863_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance [K/W]: 1.0
Thickness [mm]: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 488