Thickness in mm
-
Semiconductor Casing
Device mounted by
12800_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Width / mm: 19.0
Länge / mm: 24.0
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 491/N
12960_1_Titel
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Dielectric coefficient 2.0
SI 4018-S
5851_1_Titel
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
SI 4023
2419_1_Titel
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Dielectric coefficient 2.0
SI 4023-S
5856_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 480
5857_1_Titel
Semiconductor casing: TO-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 2.0
SI 481
5860_1_Titel
Semiconductor casing: SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 3.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 485
5862_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 487-S
5863_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 488
5864_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 489