| Semiconductor casing: | TO-3 | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Thickness [mm]: | 0.23 | |
| Insulation capacity: | 2.0 |
| Semiconductor casing: | SOT-32 | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 3.0 | |
| Thickness [mm]: | 0.18 | |
| Insulation capacity: | 2.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | TO-220 | |
| Semiconductor mounted by: | Clip Mounting ; Bonding | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.18 | |
| Insulation capacity: | 2.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | TO-220 | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.18 | |
| Insulation capacity: | 2.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | TO-220 | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.23 | |
| Insulation capacity: | 5.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | TO-218 ; TOP-3 | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.18 | |
| Insulation capacity: | 2.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | Multiwatt | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.18 | |
| Insulation capacity: | 5.0 | |
| Dielectric coefficient | 2.0 | |
| Temperature resistance | 200.0 |
| Semiconductor casing: | TO-220 | |
| Semiconductor mounted by: | Clip Mounting ; Bonding | |
| Material | Silicon w. Glasfibre | |
| Min. thermal resistance [K/W]: | 2.0 | |
| Thickness [mm]: | 0.23 | |
| Insulation capacity: | 5.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | Quarze | |
| Semiconductor mounted by: | Stick On | |
| Material | Silicon w. Glasfibre | |
| Thickness [mm]: | 0.23 | |
| Insulation capacity: | 5.0 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | TO-218 ; TOP-3 | |
| Semiconductor mounted by: | Stick On ; Clip Mounting | |
| Material | Silicon Rubber | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.3 | |
| Insulation capacity: | 10.0 | |
| Dielectric coefficient | 4.0 |
