| Semiconductor casing: | TO-220 | |
| Semiconductor mounted by: | Screw | |
| Min. thermal resistance [K/W]: | 1.0 | |
| Thickness [mm]: | 0.05 | |
| Insulation capacity: | 2.0 | |
| Temperature resistance | 550.0 |
| Semiconductor casing: | TO-220 ; TO-218 ; TOP-3 ; Multiwatt | |
| Semiconductor mounted by: | Screw | |
| Material | Makrolone | |
| Diameter [mm]: | 6.0 | |
| Inner diameter [mm]: | 3.1 | |
| Outer diameter [mm]: | 3.5 | |
| Thickness [mm]: | 0.2 | |
| Insulation capacity: | 30.0 | |
| Temperature resistance | 130.0 |
| Semiconductor casing: | TO-220 ; TO-218 ; TOP-3 ; Multiwatt | |
| Semiconductor mounted by: | Screw | |
| Material | SR25 | |
| Diameter [mm]: | 6.0 | |
| Inner diameter [mm]: | 3.1 | |
| Outer diameter [mm]: | 3.5 | |
| Thickness [mm]: | 0.2 | |
| Insulation capacity: | 16.0 | |
| Temperature resistance | 200.0 |
| Semiconductor casing: | TO-220 ; TO-218 ; TOP-3 ; Multiwatt | |
| Semiconductor mounted by: | Screw | |
| Material | Makrolone | |
| Diameter [mm]: | 6.4 | |
| Inner diameter [mm]: | 3.1 | |
| Outer diameter [mm]: | 3.8 | |
| Thickness [mm]: | 0.35 | |
| Insulation capacity: | 30.0 | |
| Temperature resistance | 130.0 |
| Semiconductor casing: | TO-220 ; TO-218 ; TOP-3 ; Multiwatt | |
| Semiconductor mounted by: | Screw | |
| Material | Makrolone | |
| Diameter [mm]: | 7.1 | |
| Inner diameter [mm]: | 3.1 | |
| Outer diameter [mm]: | 3.8 | |
| Thickness [mm]: | 0.35 | |
| Insulation capacity: | 30.0 | |
| Temperature resistance | 130.0 |
| Semiconductor casing: | TO-3 | |
| Semiconductor mounted by: | Screw | |
| Material | Makrolone | |
| Diameter [mm]: | 7.5 | |
| Inner diameter [mm]: | 3.1 | |
| Outer diameter [mm]: | 3.9 | |
| Thickness [mm]: | 0.4 | |
| Insulation capacity: | 30.0 | |
| Temperature resistance | 130.0 |
| Semiconductor casing: | Dioden | |
| Semiconductor mounted by: | Screw | |
| Material | Makrolone | |
| Diameter [mm]: | 9.5 | |
| Inner diameter [mm]: | 4.1 | |
| Outer diameter [mm]: | 6.4 | |
| Thickness [mm]: | 2.5 | |
| Insulation capacity: | 30.0 | |
| Temperature resistance | 130.0 |
| Material | Silicon w. Glasfibre | |
| Thickness [mm]: | 0.18 | |
| Dielectric coefficient | 2.0 |
| Material | Silicon w. Glasfibre | |
| Thickness [mm]: | 0.23 | |
| Dielectric coefficient | 2.0 |
| Semiconductor casing: | TO-3 | |
| Semiconductor mounted by: | Screw | |
| Material | Silicon w. Glasfibre | |
| Thickness [mm]: | 0.18 | |
| Insulation capacity: | 2.0 | |
| Dielectric coefficient | 2.0 |
