2962_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 6018-S
5875_1_Titel
Semiconductor casing: Quarze
Semiconductor mounted by: Stick On
Material Silicon w. Glasfibre
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 499
5873_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 2.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 498-S
7755_1_Titel
Semiconductor casing: Quarze
Semiconductor mounted by: Stick On
Material Silicon w. Glasfibre
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 497
5868_1_Titel
Semiconductor casing: Multiwatt
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 5.0
Dielectric coefficient 2.0
Temperature resistance in K 200.0
SI 492
5865_1_Titel
Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 490
5864_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.23
Insulation capacity: 5.0
Dielectric coefficient 2.0
SI 489
5863_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 488
5862_1_Titel
Semiconductor casing: TO-220
Semiconductor mounted by: Clip Mounting ; Bonding
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 1.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 487-S
5860_1_Titel
Semiconductor casing: SOT-32
Semiconductor mounted by: Screw
Material Silicon w. Glasfibre
Min. thermal resistance / K/W: 3.0
Thickness / mm: 0.18
Insulation capacity: 2.0
Dielectric coefficient 2.0
SI 485