![5864_1_Titel](/media/uploads/img/_Titel/15864_Titel.gif)
Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
![5865_1_Titel](/media/uploads/img/_Titel/15865_Titel.gif)
Semiconductor casing: | TO-218 ; TOP-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
![5868_1_Titel](/media/uploads/img/_Titel/15868_Titel.gif)
Semiconductor casing: | Multiwatt | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 | |
Temperature resistance | 200.0 |
![5873_1_Titel](/media/uploads/img/_Titel/15873_Titel.gif)
Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 2.0 | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
![5875_1_Titel](/media/uploads/img/_Titel/15875_Titel.gif)
Semiconductor casing: | Quarze | |
Semiconductor mounted by: | Stick On | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
![7755_1_Titel](/media/uploads/img/_Titel/17755_Titel.gif)
Semiconductor casing: | Quarze | |
Semiconductor mounted by: | Stick On | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
![12960_1_Titel](/media/uploads/img/_Titel/112960_Titel.gif)
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Dielectric coefficient | 2.0 |
![31025_1_Titel](/media/uploads/img/_Titel/131025_Titel.gif)
Semiconductor casing: | SOT-32 ; TO-126 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
![31026_1_Titel](/media/uploads/img/_Titel/131026_Titel.gif)
Semiconductor casing: | SOT-32 ; TO-126 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
![31027_1_Titel](/media/uploads/img/_Titel/131027_Titel.gif)
Semiconductor casing: | TO-247 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |