Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | TO-218 ; TOP-3 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | Multiwatt | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 | |
Temperature resistance | 200.0 |
Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 2.0 | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | Quarze | |
Semiconductor mounted by: | Stick On | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.23 | |
Insulation capacity: | 5.0 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | Quarze | |
Semiconductor mounted by: | Stick On | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
Semiconductor mounted by: | Clip Mounting ; Bonding | |
Material | Silicon w. Glasfibre | |
Thickness [mm]: | 0.18 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | SOT-32 ; TO-126 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | SOT-32 ; TO-126 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |
Semiconductor casing: | TO-247 | |
Semiconductor mounted by: | Screw | |
Material | Silicon w. Glasfibre | |
Min. thermal resistance [K/W]: | 1.0 | |
Thickness [mm]: | 0.18 | |
Insulation capacity: | 2.0 | |
Dielectric coefficient | 2.0 |