Semiconductor casing: | TO-218 ; TOP-3 | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 3.0 | |
Insulation capacity: | 30.0 | |
Dielectric coefficient | 9.0 |
Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 1.5 | |
Insulation capacity: | 15.0 | |
Dielectric coefficient | 9.0 |
Semiconductor casing: | TO-218 ; TOP-3 | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 1.5 | |
Insulation capacity: | 10.0 | |
Dielectric coefficient | 9.0 |
Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 1.5 | |
Insulation capacity: | 15.0 | |
Dielectric coefficient | 9.0 |
Semiconductor casing: | Dioden | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 1.6 | |
Insulation capacity: | 15.0 | |
Dielectric coefficient | 9.0 |
Semiconductor casing: | TO-220 | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 1.6 | |
Insulation capacity: | 10.0 | |
Dielectric coefficient | 9.0 |
Semiconductor casing: | TO-218 ; TOP-3 | |
Semiconductor mounted by: | Screw | |
Material | Alumnium Oxyde | |
Thickness [mm]: | 1.5 | |
Insulation capacity: | 10.0 | |
Dielectric coefficient | 9.0 |