AO 479
Product features
| Semiconductor casing: | TO-220 | |
| Semiconductor mounted by: | Screw | |
| Material | Alumnium Oxyde | |
| Thickness [mm]: | 1.5 | |
| Insulation capacity: | 15.0 | |
| Dielectric coefficient | 9.0 |
Aluminium-oxide -wafers facilitate insulated mounting of semiconductors within high voltage ranges. In spit of high dielectric strength, a good heat conductivity i.e. from the semiconductor to the heatsink is given. - Dielectric strength: ca. 10 KV/mm - Dielectric loss tangent: 10^-4 (for 1MHz) - Dielectric constant: 9,1 (for 1 MHz) - Resistance: 10^14 Ohm x cm - Density: 3,9 g / cm3 - Purity: 96 % - Thermal resistance (Rth): 0,5 K/W (TO3)
