AO 480

Product features

Semiconductor casing: TO-218 ; TOP-3
Semiconductor mounted by: Screw
Material Alumnium Oxyde
Thickness / mm: 3.0
Insulation capacity: 30.0
Dielectric coefficient 9.0

Aluminium-oxide -wafers facilitate insulated mounting of semiconductors within high voltage ranges. In spit of high dielectric strength, a good heat conductivity i.e. from the semiconductor to the heatsink is given. - Dielectric strength: ca. 10 KV/mm - Dielectric loss tangent: 10^-4 (for 1MHz) - Dielectric constant: 9,1 (for 1 MHz) - Resistance: 10^14 Ohm x cm - Density: 3,9 g / cm3 - Purity: 96 % - Thermal resistance (Rth): 0,5 K/W (TO3)

Product pictures

1 / 2
892_1_Titel style=
2 / 2
892_2_Bild1 style=
892_1_Titel
892_2_Bild1